Channel Epitaxy of 3C-SiC on Si Substrates by CVD

Channel Epitaxy of 3C-SiC on Si Substrates by CVD

著者名:

掲載資料名:

Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

742

発行年:

2003

開始ページ:

15

終了ページ:

22

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996793 [1558996796]

言語:

英語

請求記号:

M23500/742

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014402
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

類似資料:

1 国際会議録 Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications	7 国際会議録 Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si2Cl6+C3H8 System Masuda, Y., Ohshima, S., Jacob, C., Nishino, S. Trans Tech Publications
2 国際会議録 Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications	8 国際会議録 Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method Sugishita, S., Shoji, A., Mukai, Y., Nishiguchi, T., Michikami, K., Issiki, T., Ohshima, S., Nishino, S. Trans Tech Publications
3 国際会議録 Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications	9 国際会議録 Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy Takagi, H., Nishiguchi, T., Ohta, S., Furusho, T., Ohshima, S., Nishino, S. Trans Tech Publications
4 国際会議録 Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD Nishino, S., Masuda, Y., Ohshima, S., Jacob, C. Trans Tech Publications	10 国際会議録 Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method Isshiki, T., Nakamura, M., Nishiguchi, T., Nishio, K., Ohshima, S., Nishino, S. Trans Tech Publications
5 国際会議録 Pendeo Epitaxial Growth of 3C-SiC on Si Substrates Shoji, A., Okui, Y., Nishiguchi, T., Ohshima, S., Nishino, S. Trans Tech Publications	11 国際会議録 Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates Nishino, S., Shoji, A., Nishiguchi, T., Ohshima, S. Materials Research Society
6 国際会議録 Growth of Columnar SiC on Patterned Si Substrates by CVD Nishino, Shigehiro, Okui, Yoichi, Tai, Yuehai, Jacob, Chacko Materials Research Society	12 国際会議録 Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate Nishiguchi, T., Nakamura, M., Nishio, K., Isshiki, T., Ohshima, S., Nishino, S. Trans Tech Publications

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