MOSFETs Scaling down: advantages and disadvantages for high temperature applications

MOSFETs Scaling down: advantages and disadvantages for high temperature applications

著者名:

掲載資料名:

Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment

シリーズ名:

NATO science series. Series 2, Mathematics, physics and chemistry

シリーズ巻号:

185

発行年:

2005

開始ページ:

185

終了ページ:

190

総ページ数:

6

出版情報:

Dordrecht: Kluwer Academic Publishers

ISBN:

9781402030116 [1402030118]

言語:

英語

請求記号:

N17050/185

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014359
シリーズID:	PA00000025
会議名:	NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
回次:	2004
会議開催地:	Kiev, Ukraine
会議開催年:	2004.04.26-2004.04.30

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