Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

著者名:

Das, M. K.

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

965

終了ページ:

968

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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1 国際会議録 Evolution of Drift-Free, High Power 4H-SiC PiN Diodes Das, M.K., Sumakeris, J.J., Hull, B.A., Richmond, J. Trans Tech Publications	7 国際会議録 Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs Ryu, S.H., Krishnaswami, S., Hull, B.A., Heath, B., Das, M.K., Richmond, J.T., Agarwal, A.K., Palmour, J.W., Scofield, … Trans Tech Publications
2 国際会議録 Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications B.A. Hull, J.J. Sumakeris, M. Das, J. Richmond, J. Palmour Trans Tech Publications	8 国際会議録 Development of 10 kV 4H-SiC Power DMOSFETs Ryu, S.H., Agarwal, A., Krishnaswami, S., Richmond, J., Palmour, J. Trans Tech Publications
3 国際会議録 High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications Hull, B.A., Das, M.K., Richmond, J.T., Heath, B., Sumakeris, J.J., Geil, B.R., Scozzie, C.J. Trans Tech Publications	9 国際会議録 High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications
4 国際会議録 High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift Das, M.K., Sumakeris, J.J., Paisley, M.J., Powell, A. Trans Tech Publications	10 国際会議録 Mechanisms of Stacking Fault Growth in SiC PiN Diodes Stahlbush, R.E., Twigg, M.E., Sumakeris, J.J., Irvine, K.G., Losee, P.A. Materials Research Society
5 国際会議録 Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond Trans Tech Publications	11 国際会議録 A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs S.H. Ryu, S. Krishnaswami, B.A. Hull, B. Heath, F. Husna, J. Richmond, A. Agarwal, J. Palmour, J. Scofield Trans Tech Publications
6 国際会議録 Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzen, E., Lendenmann, H., O'Loughlin, M.J., … Trans Tech Publications	12 国際会議録 Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal Das, M.K., Hull, B.A., Krishnaswami, S., Husna, F., Haney, S., Lelis, A.J., Scozzie, C.J., Scofield, J.D. Trans Tech Publications

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