Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material

著者名:

Gudjonsson, G.

Olafsson, H. O.

Allerstam, F.

Nilsson, P. A.

Sveinbjornsson, E. O.

Rodle, T.

Jos, R.

さらに 2 件

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

833

終了ページ:

836

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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1 国際会議録 High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material Sveinbjornsson, E. O., Olafsson, H. O., Gudjonsson, G., Allerstam, F., Nilsson, P. A., Syvajarvi, M., Yakimova, R., … Trans Tech Publications	7 国際会議録 Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O) Gudjonsson, G., Olafsson, H.O., Sveinbjoernsson, E.O. Trans Tech Publications
2 国際会議録 High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment Allerstam, F., Gudjonsson, G., Olafsson, H. O., Sveinbjornsson, E. O., Rodle, T., Jos, R. Trans Tech Publications	8 国際会議録 Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation F. Allerstam, G. Gudjonsson, E.O. Sveinbjornsson, T. Rodle, R. Jos Trans Tech Publications
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4 国際会議録 Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps E.O. Sveinbjornsson, F. Allerstam, H.O. Olafsson, G. Gudjonsson, D. Dochev, T. Rodle, R. Jos Trans Tech Publications	10 国際会議録 On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures Olafsson, H.OE., Allerstam, F., Sveinbjornsson, E.OE. Trans Tech Publications
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6 国際会議録 High Frequency 4H-SiC MOSFETs G. Gudjonsson, F. Allerstam, P.A. Nilsson, H. Hjelmgren, E.O. Sveinbjornsson, H. Zirath, T. Rodle, R. Jos Trans Tech Publications	12 国際会議録 Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs P.Å. Nilsson, M. Sudow, F. Allerstam, K. Andersson, E.Ö. Sveinbjörnsson Trans Tech Publications

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