Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET

Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

813

終了ページ:

816

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Fabrication of 4H-SiC Double-Epitaxial MOSFETs Harada, S., Okamoto, M., Yatsuo, T., Adachi, K., Suzuki, K., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications	7 国際会議録 Fabrication of P-Channel MOSFETs on 4H-SiC C-Face M. Okamoto, M. Iijima, T. Yatsuo, T. Nagano, K. Fukuda Trans Tech Publications
2 国際会議録 4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET Harada, S., Kato, M., Okamoto, M., Yatsuo, T., Fukuda, K., Arai, K. Trans Tech Publications	8 国際会議録 Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mΩ･cm2 Tanaka, Y., Yano, K., Okamoto, M., Takatsuka, A., Fukuda, K., Kasuga, M., Arai, K., Yatsuo, T. Trans Tech Publications
3 国際会議録 4H-SiC p-Channel MOSFETs with Epi-Channel Structure M. Okamoto, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai Trans Tech Publications	9 国際会議録 Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility Okamoto, M., Tanaka, M., Yatsuo, T., Fukuda, K. Trans Tech Publications
4 国際会議録 Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face S. Harada, M. Kato, T. Yatsuo, K. Fukuda, K. Arai Trans Tech Publications	10 国際会議録 Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC M. Okamoto, M. Tanaka, T. Yatsuo, K. Fukuda Trans Tech Publications
5 国際会議録 Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka Trans Tech Publications	11 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications
6 国際会議録 4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates Okamoto, M., Suzuki, S., Kato, M., Yatsuo, T., Fukuda, K. Trans Tech Publications	12 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12