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Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET Fabrication

著者名:
Kim, S. C.
Bahng, W.
Kim, N. K.
Kim, E. D.
Ayalew, T.
Grasser, T.
Selberherr, S.
さらに 2 件
掲載資料名:
Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
シリーズ名:
Materials science forum
シリーズ巻号:
483-485
発行年:
2005
開始ページ:
793
終了ページ:
796
総ページ数:
4
出版情報:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499632 [0878499636]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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