J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃

J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

629

終了ページ:

632

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor Bergamini, F., Rao, S.P., Poggi, A., Tamarri, F., Saddow, S.E., Nipoti, R. Trans Tech Publications	7 国際会議録 High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC R. Nipoti, A. Nath, M.V. Rao, A. Hallén, F. Mancarella Trans Tech Publications
2 国際会議録 A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient Rao, S., Saddow, S.E., Bergamini, F., Nipoti, R., Emirov, Y., Agrawal, Anant Materials Research Society	8 国際会議録 Al⁺ Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation U. Grossner, F. Moscatelli, R. Nipoti Trans Tech Publications
3 国際会議録 Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD Rao, S.P., Bergamini, F., Nipoti, R., Hoff, A.M., Oborina, E., Saddow, S.E. Trans Tech Publications	9 国際会議録 DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes H.M. Ayedh, M. Puzzanghera, B.G. Svensson, R. Nipoti Trans Tech Publications
4 国際会議録 Ar Annealing at 1600℃ and 1650℃ of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature Bergamini, F., Moscatelli, F., Canino, M., Poggi, A., Nipoti, R. Trans Tech Publications	10 国際会議録 Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini Materials Research Society
5 国際会議録 Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., Canino, M., Bertuccio, G. Trans Tech Publications	11 国際会議録 High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching Saddow, S. E., Williams, J., Isaacs-Smith, T., Capano, M., Cooper, J. A., Mazzola, M. S., Hsieh, A. J., Casady, J. B. Trans Tech Publications
6 国際会議録 Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes F. Moscatelli, F. Bergamini, A. Poggi, M. Passini, F. Tamarri Trans Tech Publications	12 国際会議録 Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC R. Nipoti, A. Nath, S. Cristiani, M. Sanmartin, M.V. Rao Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12