Aluminum Implantation Induced Linear Surface Faults in 4H-SiC
- 著者名:
Wright, N. G. Vassilevski, K. V. Nikitina, I. Horsfall, A. B. Johnson, C. M. Bhatnagar, P. Tappin, P. - 掲載資料名:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 483-485
- 発行年:
- 2005
- 開始ページ:
- 613
- 終了ページ:
- 616
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
4.6 kV, 10.5 mOhm&×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
国際会議録
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
Trans Tech Publications |
Trans Tech Publications |
11
国際会議録
Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown
Trans Tech Publications |
6
国際会議録
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
Trans Tech Publications |
Trans Tech Publications |