Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal

Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal

著者名:

Shibagaki, M.

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

609

終了ページ:

612

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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2 国際会議録 Impact of EBAS Annealing on Sheet Resistance Reduction for Al-Implanted 4H-SiC(0001) Masami Shibagaki, Akihiro Egami, Akira Kumagai, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Shingo … Materials Research Society	8 国際会議録 Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing T. Sugimoto, M. Satoh, T. Nakamura, K. Mashimo, H. Doi Trans Tech Publications
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