SiC/SiO2 Interface States: Properties and Models

SiC/SiO2 Interface States: Properties and Models

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

563

終了ページ:

568

総ページ数:

6

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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1 国際会議録 Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001) Afanas'ev, V.V., Campbell, S.A., Cheong, K.Y., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A., Zhong, L. Trans Tech Publications	7 国際会議録 SiC/SiO2 interface defects Afanas'ev, V. V. Kluwer Academic Publishers
2 国際会議録 Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, S., Cheong, K.-Y., Afanas'ev, V.V., Wagner, G. Trans Tech Publications	8 国際会議録 Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Bassler, M., Afanas'ev, V. V., Pensl, G., Schulz, M. Trans Tech Publications
3 国際会議録 Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces Ciobanu, F., Frank, T., Pensl, G., Afanas'ev, V., Shamuilia, S., Schoner, A., Kimoto, T. Trans Tech Publications	9 国際会議録 Interface State Density at Implanted 6H SiC/SiO2 MOS Structures Bassler,M., Afanas'ev,V.V., Pensl,G. Trans Tech Publications
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