Photoluminescence Study of In Situ Rare Earth Doped PVT-Grown SiC Single Crystals

Photoluminescence Study of In Situ Rare Earth Doped PVT-Grown SiC Single Crystals

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

445

終了ページ:

448

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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2 国際会議録 High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up Muller, R., Kunecke, U., Weingartner, R., Schmitt, H., Desperrier, P., Wellmann, P. Trans Tech Publications	8 国際会議録 Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method Contreras, S., Zielinski, M., Konczewicz, L., Blanc, C., Juillaguet, S., Muller, R., Kunecke, U., Wellmann, P.J., … Trans Tech Publications
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