Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
- 著者名:
Kato, M. Tanaka, S. Ichimura, M. Arai, E. Nakamura, S. Kimoto, T. - 掲載資料名:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 483-485
- 発行年:
- 2005
- 開始ページ:
- 381
- 終了ページ:
- 384
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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4
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Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
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Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
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6
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Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
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