Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

355

終了ページ:

358

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy Danno, K., Kimoto, T. Trans Tech Publications	7 国際会議録 Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy S.A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki Trans Tech Publications
2 国際会議録 Growth and Electrical Characterization of 4H-SiC Epilayers T. Kimoto, K. Danno, T. Hori, H. Matsunami Trans Tech Publications	8 国際会議録 Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition Fujiwara, H., Danno, K., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy K. Danno, T. Kimoto Trans Tech Publications	9 国際会議録 Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Kimoto, T., Danno, K., Fujihira, K., Shiomi, H., Matsunami, H. Trans Tech Publications
4 国際会議録 High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Deep Levels in As-Grown and Electron-Irradiated P-Type 4H-SiC Katsunori Danno, Tsunenobu Kimoto Materials Research Society
5 国際会議録 Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate T. Hori, K. Danno, T. Kimoto Trans Tech Publications	11 国際会議録 Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC Schoener, A., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications
6 国際会議録 High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	12 国際会議録 Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12