Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilane

Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilane

著者名:

Sartel, C.

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

121

終了ページ:

124

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems Sartel, C., Balloud, C., Souliere, V., Juillaguet, S., Dazord, J., Monteil, Y., Camassel, J., Rushworth, S. Trans Tech Publications	7 国際会議録 Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers Juillaguet, S., Balloud, C., Pernot, J., Sartel, C., Souliere, V., Camassel, J., Monteil, Y. Trans Tech Publications
2 国際会議録 Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates Blanc, C., Zielinski, M., Souliere, V., Sartel, C., Juillaguet, S., Contreras, S., Camassel, J., Monteil, Y. Trans Tech Publications	8 国際会議録 Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt Jacquier, C., Ferro, G., Balloud, C., Zielinski, M., Camassel, J., Polychroniadis, E., Stoemenos, J., Cauwet, F., … Trans Tech Publications
3 国際会議録 Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements Juillaguet, S., Zielinski, M., Balloud, C., Sartel, C., Consejo, C., Boyer, B., Souliere, V., Camassel, J., Monteil, Y. Trans Tech Publications	9 国際会議録 Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System Sartel, C., Bluet, J.M., Souliere, V., El-Harrouni, I., Monteil, Y., Mermoux, M., Guillot, G. Trans Tech Publications
4 国際会議録 Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates Blanc, C., Sartel, C., Souliere, V., Juillaguet, S., Monteil, Y., Camassel, J. Trans Tech Publications	10 国際会議録 Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC Zielinski, M., Balloud, C., Juillaguet, S., Boyer, B., Souliere, V., Camassel, J. Trans Tech Publications
5 国際会議録 Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS Sartel, C., Souliere, V., Dazord, J., Monteil, Y., El-Harrouni, I., Bluet, J.M., Guillot, G. Trans Tech Publications	11 国際会議録 Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si Melt Godignon, P., Jacquier, C., Blanque, S., Montserrat, J., Ferro, G., Contreras, S., Zielinski, M., Monteil, Y. Trans Tech Publications
6 国際会議録 Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS Sartel, C., Souliere, V., Dazord, J., Monteil, Y., El-Harrouni, I., Bluet, J.M., Guillot, G. Trans Tech Publications	12 国際会議録 SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts H. Peyre, N. Habka, V. Souliere, M. Soueidan, G. Ferro, Y. Monteil, J. Camassel Trans Tech Publications

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