Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC

Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

109

終了ページ:

112

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM H.S. Seo, H.G. Song, J.H. Moon, J.H. Yim, M.S. Oh Trans Tech Publications	7 国際会議録 Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds Schulz, D., Doerschel, J., Irmscher, K., Rost, H.-J., Siche, D., Wollweber, J. Materials Research Society
2 国際会議録 Morphological Features of Sublimation-Grown 4H-SiC Layers Schulz, D., Doerschel, J. Trans Tech Publications	8 国際会議録 Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Wagner, G., Leitenberger, W., Irmscher, K., Schmid, F., Laube, M., Pensl, G. Trans Tech Publications
3 国際会議録 Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals Rost, H.-J., Dolle, J., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. Trans Tech Publications	9 国際会議録 Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Wagner, G., Leitenberger, W., Irmscher, K., Schmid, F., Laube, M., Pensl, G. Trans Tech Publications
4 国際会議録 Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport Rost, H.-J., Irmscher, K., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. Trans Tech Publications	10 国際会議録 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes Rost, H.-J., Doerschel, J., Schulz, D., Siche, D., Wollweber, J. Trans Tech Publications
5 国際会議録 Lateral Growth Expansion of 4H/6H-SiC M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy A.J. Trunek, P.G. Neudeck, A.A. Woodworth, J.A. Powell, D.J. Spry Trans Tech Publications	11 国際会議録 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes Rost, H.-J., Doerschel, J., Schulz, D., Siche, D., Wollweber, J. Trans Tech Publications
6 国際会議録 Quality Improvement of 4″ 4H-SiC Crystal by Using Modified Seed Adhesion Method J.W. Choi, J.H. Park, J.D. Seo, J.G. Kim, M.O. Kyun, K.R. Ku, H.J. Kim, D.H. Lee, Y.S. Jang, W.J. Lee Trans Tech Publications	12 国際会議録 Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC Siche, D., Albrecht, M., Doerschel, J., Irmscher, K., Rost, H. J., Rossberg, M., Schulz, D. Trans Tech Publications

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