2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

著者名:

Kojima, K.

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

93

終了ページ:

96

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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1 国際会議録 Improvement of Homoepitaxial Layer Quality Grown on 4H-SiC Si-Face Substrate Lower than 1 Degree Off Angle K. Kojima, S. Ito, A. Nagata, H. Okumura Trans Tech Publications	7 国際会議録 Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate K. Kojima, K. Masumoto, S. Ito, A. Nagata, H. Okumura Trans Tech Publications
2 国際会議録 Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth K. Kojima, S. Kuroda, H. Okumura, K. Arai Trans Tech Publications	8 国際会議録 Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén Trans Tech Publications
3 国際会議録 Investigation of In-Grown Dislocations in 4II-SiC Epitaxial Layers Kojima, K., Kato, T., Kuroda, S., Okumura, H., Arai, K. Trans Tech Publications	9 国際会議録 Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films Takahashi, T., Ishida, Y., Tsuchida, H., Kamata, I., Okumura, H., Yoshida, S., Arai, K. Trans Tech Publications
4 国際会議録 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition Kojima, K., Takahashi, T., Ishida, Y., Kuroda, S., Okumura, H., Arai, K. Trans Tech Publications	10 国際会議録 Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films Takahashi, T., Ishida, Y., Tsuchida, H., Kamata, I., Okumura, H., Yoshida, S., Arai, K. Trans Tech Publications
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6 国際会議録 The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle K. Masumoto, K. Kojima, H. Okumura Trans Tech Publications	12 国際会議録 Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth K. Kojima, H. Okumura, K. Arai Trans Tech Publications

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