Homoepitaxial Growth of 4H-SiC Using CH3CI Carbon Precursor

Homoepitaxial Growth of 4H-SiC Using CH3CI Carbon Precursor

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

81

終了ページ:

84

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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2 国際会議録 Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive H.D. Lin, G. Melnychuk, J.L. Wyatt, Y. Koshka Trans Tech Publications	8 国際会議録 Low-Temperature Homoepitaxial Growth with SiCI₄ Precursor Compared to HCl Assisted SiH₄-Based Growth S.P. Kotamraju, G. Melnychuk, Y. Koshka Trans Tech Publications
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