Defect Properties in GaN: Ab Initio and Empirical Potential Calculations

Defect Properties in GaN: Ab Initio and Empirical Potential Calculations

著者名:

掲載資料名:

PRICM 5 : the Fifth Pacific Rim International Conference on Advanced Materials and Processing, November 2-5, 2004, Beijing, China

シリーズ名:

Materials science forum

シリーズ巻号:

475-479(4)

発行年:

2005

開始ページ:

3087

終了ページ:

3090

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499601 [0878499601]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014238
シリーズID:	PA00000012
会議名:	PRICM : Pacific Rim International Conference on Advanced Materials and Processing
回次:	5th
会議開催地:	Beijing, China
会議開催年:	2004.11.02-2004.11.05

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