Characterization of AlGaN/GaN HEMT Devices Grown by MBE

Characterization of AlGaN/GaN HEMT Devices Grown by MBE

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1647

終了ページ:

1650

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

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2 国際会議録 The Ammonia- MBE Approach for High Electron Mobility in GaN Epilayers And AlGaN/GaN HFET * Tang, H., Webb, J.B., Bardwell, J.A. Electrochemical Society	8 国際会議録 AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) With the Delta-Doped Barrier Layer Fan, Z.Y., Li, J., Lin, J.Y., Jiang, H.X., Liu, Y., Bardwell, J.A., Webb, J.B., Tang, H. Materials Research Society
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