Radiative Recombination in InGaN/GaN Multiple Quantum Wells

Radiative Recombination in InGaN/GaN Multiple Quantum Wells

著者名:

Bergman, J. P.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1571

終了ページ:

1574

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures Monemar, B., Bergman, J. P., Dalfors, J., Pozina, G., Sernelius, B. E., Holtz, P. O., Amano, H., Akasaki, I. MRS - Materials Research Society	7 国際会議録 Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes Bergman, J.P., Pozina, G., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Trans Tech Publications
2 国際会議録 Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures Monemar,B., Bergman,J.P., Pozina,G., Dalfors,J., Sernelius,B.E., Holtz,P.O., Amano,H., Akasaki,I. SPIE - The International Society for Optical Engineering	8 国際会議録 Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN Heterostructures Buyanov, A. V., Sandberg, J., Bergman, J. P., Sernelius, B. E., Holtz, P-O., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society
3 国際会議録 Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport Pozina, G., Bergman, J.P., Monemar, B., Iwaya, M., Nitta, S., Amano, H., Akasaki, I. Trans Tech Publications	9 国際会議録 Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells Monemar, B., Paskov, P.P., Bergman, J.P., Pozina, G., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Materials Research Society
4 国際会議録 Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures Monemar, B., Paskov, P.P., Haratizadeh, H., Pozina, G.R., Bergman, J.P., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. SPIE-The International Society for Optical Engineering	10 国際会議録 Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells Bergman,J.P., Holtz,P.O., Monemar,B., Lindstrom,L., Sundaram,M., Gossard,A.C., Merz,J.L. Trans Tech Publications
5 国際会議録 Optical Properties of InGaN/GaN Multiquantum-Well Structures Bergman, J. P., Saksulv, N., Dalfors, J., Holtz, P. O., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society	11 国際会議録 Exciton Lifetimes in GaN Bergman, J. P., Harris, C., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society
6 国際会議録 Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes Bergman, J.P., Pozina, G., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Trans Tech Publications	12 国際会議録 Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells Bergman,J.P., Holtz,P.O., Monemar,B., Sundaram,M., Merz,J.L., Gossard,A.C. Trans Tech Publications

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