Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes

Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1323

終了ページ:

1326

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes Osterman, J., Hallen, A., Jargelius, M., Zimmermann, U., Galeckas, A., Breitholtz, B. Trans Tech Publications	7 国際会議録 The Deep Boron Level in High-Voltage PiN Diodes Stadler, W., Hallen, A., Osterman, J., Zimmermann, U., Svensson, B.G. Trans Tech Publications
2 国際会議録 Electrical and Optical Characterisation of High Voltage 4H Silicon Carbide Diodes Hallen, A., Zimmermann, U., Osterman, J., Galeckas, A., Linnros, J., Breitholtz, B. Electrochemical Society	8 国際会議録 The Deep Boron Level in High-Voltage PiN Diodes Aberg, D., Hallen, A., OEsterman, J., Zimmermann, U., Svensson, B.G. Trans Tech Publications
3 国際会議録 Investigation of Microplasma Breakdown in 4H Silicon Carbide Zimmermann, Uwe, Hallen, Anders, Konstantinov, Andrey O., Breitholtz, Bo MRS - Materials Research Society	9 国際会議録 Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level Domeij, M., Zimmermann, U., Aberg, D., Ostermann, J., Hallen, A., Ostling, M. Trans Tech Publications
4 国際会議録 Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide Zimmermann, U., Domeij, M., Hallen, A., Oestling, M. Trans Tech Publications	10 国際会議録 Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities Dyakonova, N. V., Ivanov, P. A., Kozlov, V. A., Levinshtein, M. E., Palmour, J. W., Rumyantsev, S. L., Singh, R. Trans Tech Publications
5 国際会議録 Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers Zimmermann, U., Osterman, J., Zhang, J., Henry, A., Hallen, A. Trans Tech Publications	11 国際会議録 SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers Zimmermann, U., Osterman, J., Galeckas, A., Hallen, A. Trans Tech Publications
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