Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 338-342(2)
- 発行年:
- 2000
- 開始ページ:
- 1223
- 終了ページ:
- 1226
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
MRS - Materials Research Society |
MRS-Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
4
国際会議録
The Response of High-Voltage 4H-SiC p-n Junction Diodes to Different Edge-Termination Techniques
MRS - Materials Research Society |
10
国際会議録
Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors
MRS - Materials Research Society |
MRS-Materials Research Society |
MRS - Materials Research Society |
6
国際会議録
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
Trans Tech Publications |
Trans Tech Publications |