Atomic-Scale Engineering of the SiC-SiO2 Interface

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1133

終了ページ:

1136

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Bonding, Defects, and Defect Dynamics in the SiC-SiO2 System Pantelides, S.T., Buczko, R., Ventra, M. Di, Wang, S., Kim, S.-G., Pennycook, S.J., Duscher, G., Feldman, L.C., … Materials Research Society	7 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications
2 国際会議録 Compositional and Electrical Differences of SiO2/SiC and SiO2/Si Structures Upon Thermal Annealing in N2O and NO Stedile, F.C., Radtke, C., Baumvol, I.J.R., Boudinov, H., McDonald, K., Huang, M.B., Weller, R.A., Feldman, L.C., … Electrochemical Society	8 国際会議録 Microscopic and theoretical investigations of the Si-SiO2 interface Duscher, G., Buzcko, R., Pennycook, S. J., Pantelides, S. T., Mullejans, H., Ruhle, M. MRS-Materials Research Society
3 国際会議録 Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances Pantelides, S.T., Wang, S., Franceschetti, A., Buczko, R., Di Ventra, M., Rashkeev, S.N., Tsetseris, L., Evans, M.H., … Trans Tech Publications	9 国際会議録 Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures F.C. Stedile, S.A. Corrêa, C. Radtke, L. Miotti, I.J.R. Baumvol Trans Tech Publications
4 国際会議録 Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC McDonald, K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Chung, G.Y, Tin, C.C., Williams, J.R. Electrochemical Society	10 国際会議録 The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC Radtke, C., Baumvol, I. J. R., Ferrera, B. C., Stedile, F. C. Trans Tech Publications
5 国際会議録 Atomic-scale structure of the Si-SiO2 and SiC-SiO2 interfaces and the origin of their contrasting properties Buczko, Ryszard, Pennycook, Stephen J., Pantelides, Sokrates T. MRS-Materials Research Society	11 国際会議録 The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC Chung, G. Y., Tin, C. C., Won, J. H., Williams, J. R. Trans Tech Publications
6 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications	12 国際会議録 Atomic Transport During Thermal Nitridation of SiO2 Films in NH3 and During Subsequent Thermal Reoxidation Baumvol, I.J.R., Breelle, E., Stedile, F.C., Ganem, J.-J., Trimaille, I., Rigo, S. Electrochemical Society

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