Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETS on (1120) Face

Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETS on (1120) Face

著者名:

Yano, H.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1105

終了ページ:

1108

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

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1 国際会議録 4H-SiC MOSFETs on (03-38) Face Hirao, T., Yano, H., Kimoto, T., Matsunami, H., Shiomi, H. Trans Tech Publications	7 国際会議録 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching Wahab, Q., Kosugi, H., Yano, H., Hallin, C., Kimoto, T., Matsunami, H. Trans Tech Publications
2 国際会議録 4H-SiC MOSFETs on (03-38) Face Hirao, T., Yano, H., Kimoto, T., Matsunami, H., Shiomi, H. Trans Tech Publications	8 国際会議録 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching Wahab, Q., Kosugi, H., Yano, H., Hallin, C., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 4H-SiC (1120) Epitaxial Growth Kimoto, T., Yamamoto, T., Chen, Z. Y., Yano, H., Matsunami, H. Trans Tech Publications	9 国際会議録 Short-Channel Effects in 4H-SiC MOSFETs Noborio, M., Kanzaki, Y., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications
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