Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing

Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1005

終了ページ:

1008

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Formation of Tungsten Ohmic Coutact on n-Type 6H-SiC by Pulsed Laser Processes Nakashima,K., Eryu,O., Kurne,T., Nakata,T., Inoue,M. Trans Tech Publications	7 国際会議録 Optimization Of The Processing Parameters For Pulsed Laser Deposition Of Nickel Silicide Ohmic Contacts On SiC Richardson, C.J.K., Wisnioski, M.H., Spicer, J.B., Demaree, J.D., Cole, M.W., Hubbard, C.W., Joshi, P.C., Hirvonen, … Materials Research Society
2 国際会議録 Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide Hishida, Y., Watanabe, M., Nakashima, K., Eryu, O. Trans Tech Publications	8 国際会議録 Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC Eryu, O., Matsuo, D., Abe, K., Nakashima, K. Trans Tech Publications
3 国際会議録 Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method Eryu, O., Aoyama, K., Abe, K., Nakashima, K. Materials Research Society	9 国際会議録 Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC Eryu, O., Matsuo, D., Abe, K., Nakashima, K. Trans Tech Publications
4 国際会議録 Optical Centers Related to Laser-Doped Erbium in Silicon Nakashima, K., Eryu, O., Iioka, O., Minami, H., Watanabe, M. MRS - Materials Research Society	10 国際会議録 Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Ohshima, T., Uedono, A., Eryu, O., Lee, K.K., Abe, K., Itoh, H., Nakashima, K. Trans Tech Publications
5 国際会議録 Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces Abe, K., Sumitomo, M., Sumi, T., Eryu, O., Nakashima, K. Trans Tech Publications	11 国際会議録 Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Suicide Ohmic Contacts to 4H n-SiC Cole, M.W., Joshi, P G., Hubbard, C.W., Ngo, E., Demaree, J.D., Hirvonen, I.K., Wood, M., Ervin, M., Richardson, C.J.K., … Electrochemical Society
6 国際会議録 Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces Abe, K., Sumitomo, M., Sumi, T., Eryu, O., Nakashima, K. Trans Tech Publications	12 国際会議録 A Novel Direct Pulse Laser Deposited Nickel Silicide Ohmic Contact to n-SiC Cole, M.W., Joshi, P.C., Hubbard, C.W., Ngo, E., Demaree, J.D., Hirvonen, J.K., Wood, M.C., Ervin, M.H. Materials Research Society

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