Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion

Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

949

終了ページ:

952

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

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1 国際会議録 Self Diffusion in SiC: the Role of Intrinsic Point Defects Mattausch, A., Bockstedte, M., Pankratov, O. Trans Tech Publications	7 国際会議録 Boron in SiC: Structure and Kinetics Bockstedte, M., Mattausch, A., Pankratov, O. Trans Tech Publications
2 国際会議録 The Nature and Diffusion of Intrinsic Point Defects in SiC Bockstedte, M., Heid, M., Mattausch, A., Pankratov, O. Trans Tech Publications	8 国際会議録 A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials Mattausch, A., Bockstedte, M., Pankratov, O. Trans Tech Publications
3 国際会議録 The Nature and Diffusion of Intrinsic Point Defects in SiC Bockstedte, M., Heid, M., Mattausch, A., Pankratov, O. Trans Tech Publications	9 国際会議録 Identification and Annealing of Common Intrinsic Defect Centers Bockstedte, M., Heid, M., Mattausch, A., Pankratov, O. Trans Tech Publications
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5 国際会議録 The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study Bockstedte, M., Mattausch, A., Pankratov, O. Trans Tech Publications	11 国際会議録 Kinetic Mechanisms for the Deactivation of Nitrogen in SiC Bockstedte, M., Mattausch, A., Pankratov, O. Trans Tech Publications
6 国際会議録 Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC Bockstedte, M., Mattausch, A., Pankratov, O. Trans Tech Publications	12 国際会議録 Carbon Interstitials in SiC: A Model for the DII Center Mattausch, A., Bockstedte, M., Pankratov, O. Trans Tech Publications

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