Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC

Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC

著者名:

Sands, D.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

655

終了ページ:

658

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Optical Characterization of Ion-Implanted 4H-SiC Feng, Z.C., Yan, F., Chang, W.Y., Zhao, J.H., Lin, J. Trans Tech Publications	7 国際会議録 Surface Control of 4H-SiC MESFETs Hilton, K.P., Uren, M.J., Hayes, D.G., Johnson, H.K., Wilding, P.J. Trans Tech Publications
2 国際会議録 Optical Characterization of Ion-Implanted 4H-SiC Feng, Z.C., Yan, F., Chang, W.Y., Zhao, J.H., Lin, J. Trans Tech Publications	8 国際会議録 PULSED EXCIMER LASER (308 nm) ANNEALING OF ION IMPLANTED SILICON AND SOLAR CELL FABRICATION Lowndes, D. H., Cleland, J., W., Christie, W. H., Eby, R. E., Jellison Jr., G. E, Narayan, J., Westbrook, R. D., Wood, … North-Holland
3 国際会議録 LATTICE PARAMETER CHANGES IN HIGH DOSE ION-IMPLANTED, PULSED LASER ANNEALED GaAs:Si Compaan, A., Yao, H. D., Adams, P. M., Knudsen, J. F. Materials Research Society	9 国際会議録 Surface Control of 4H-SiC MESFETs Hilton, K., Uren, M.J., Hayes, D.G., Johnson, H.K., Wilding, P.J. Trans Tech Publications
4 国際会議録 Investigation of nonlinear optical properties of ion-implanted and high-pulse laser deposition SiC:Ge waveguide (Invited Paper) Darwish, A.M., Elsamadecy, A., Koplitz, B.D., Colclough, H.J., Gomlak, G., Combs, R., Jalbout, A., Aggarwal, M.D., Ila, … SPIE-The International Society for Optical Engineering	10 国際会議録 Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation S. Guillemin, R. Esteve, C. Heidorn, G. Unegg, G. Reinwald, M. Hartl, D. Kueck Trans Tech Publications
5 国際会議録 Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation Na, H.J., Kim, D.H., Jung, S.Y., Song, I.B., Um, M.Y., Song, H.K., Jeong, J.K., Lee, J.B., Kim, H.J. Trans Tech Publications	11 国際会議録 Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Suicide Ohmic Contacts to 4H n-SiC Cole, M.W., Joshi, P G., Hubbard, C.W., Ngo, E., Demaree, J.D., Hirvonen, I.K., Wood, M., Ervin, M., Richardson, C.J.K., … Electrochemical Society
6 国際会議録 Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction Camassel, J., Peyre, H., Brink, D.J., Zielinski, M., Blanque, S., Mestres, N., Godignon, P. Trans Tech Publications	12 国際会議録 Channeling Measurements of Ion Implantation Damage in 4H-SiC Kuznetsov, A.Yu., Janson, M.S., Hallen, A., Svensson, B.G., Jagadish, C., Gruenleitner, H., Pensl, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12