4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
- 著者名:
Kalinina, E. V. Zubrilov, A. Solov'ev, V. Kuznetsov, N. Hallen, A. Konstantinov, A. Karlsson, S. Rendakova, S. Dmitriev, V. - 掲載資料名:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 338-342(1)
- 発行年:
- 2000
- 開始ページ:
- 505
- 終了ページ:
- 508
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
3
国際会議録
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
Trans Tech Publications |
9
国際会議録
Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation
Trans Tech Publications |
Materials Research Society |
10
国際会議録
Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |