In-Situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography

In-Situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography

著者名:

Kato, T.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

457

終了ページ:

460

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique Oyanagi, N., Nishizawa, S., Kato, T., Yamaguchi, H., Arai, K. Trans Tech Publications	7 国際会議録 Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method Nishizawa, S.-i., Michikawa, Y., Kato, T., Hirose, F., Oyanagi, N., Arai, K. Trans Tech Publications
2 国際会議録 Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography Kato, T., Oyanagi, N., Yamaguchi, H., Nishizawa, S., Arai, K. Trans Tech Publications	8 国際会議録 Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth Kato, T., Oyanagi, N., Kitou, Y., Nishizawa, S., Arai, K. Trans Tech Publications
3 国際会議録 High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment Nishizawa, S.I., Kato, T., Kitou, Y., Oyanagi, N., Hirose, F., Yamaguchi, H., Bahng, W., Arai, K. Trans Tech Publications	9 国際会議録 Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth Kato, T., Oyanagi, N., Kitou, Y., Nishizawa, S., Arai, K. Trans Tech Publications
4 国際会議録 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	10 国際会議録 Large Diameter and Long Length Growth of SiC Single Crystal Kato, T., Ohno, T., Hirose, F., Oyanagi, N., Nishizawa, S., Arai, K. Trans Tech Publications
5 国際会議録 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	11 国際会議録 Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid Bahng, W., Kitou, Y., Nishizawa, S., Yamaguchi, H., Khan, M. N., Oyanagi, N., Arai, K., Nishino, S. Trans Tech Publications
6 国際会議録 X-Ray Topographic Study of SiC Crystal at High Temperature Yamaguchi, H., Oyanagi, Na., Kato, T., Takano, Y., Nishizawa, S., Bahng, W., Yoshida, S., Arai, K. Trans Tech Publications	12 国際会議録 Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method Hirose, F., Kitou, Y., Oyanagi, N., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications

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