Growth and Characterization of N-Doped SiC Films from Trimethylsilane

Growth and Characterization of N-Doped SiC Films from Trimethylsilane

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

273

終了ページ:

276

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 HIGH GROWTH RATE OF SILICON CARBIDE ON SILICON (111) SUBSTRATES BY CHEMICAL VAPOR DEPOSITION USING TRIMETHYLSILANE Madapura, S., Steckl, A.J., Loboda, M. Electrochemical Society	7 国際会議録 Using Trimethylsilane to Improve Safety, Throughput and Versatility in PECVD processes Loboda, M.J., Seifferly, J.A., Grove, C.M., Schneider, R.F. Electrochemical Society
2 国際会議録 Heteroepitaxial Growth of SiC on Si by Gas Seurce MBE with Silacyclobutane Chen,J., Steckl,A.J., Loboda,M.J. Trans Tech Publications	8 国際会議録 Oxidation of PECVD Deposited From Trimethylsilane DiFonzo, P. A., Massuda, M., Kelliher, J. T. MRS - Materials Research Society
3 国際会議録 SiC SOI structures by direct carbonization conversion and direct growth from silacyclobutame Steckl, A.J., Yuan, C., Tong, Q.Y., Goesele, U., Loboda, M.J. Electrochemical Society	9 国際会議録 RAMAN SCATTERING CHARACTERIZATION OF ULTRATHIN FILMS OF β-SiC Choo, Ahn Goo, Tlali, Spirit, Jackson, Howard E., Li, J. P., Steckl, Andrew J. MRS - Materials Research Society
4 国際会議録 Deposition of Low-k Dielectric Films Using Trimethylsilane Loboda, M.J., Seifferly, J.A., Schneider, R.F., Grove, C.M. Electrochemical Society	10 国際会議録 A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC Hansen, D.M., Chung, G., Loboda, M.J. Trans Tech Publications
5 国際会議録 The Influence of Temperature on the Deposition of Low-k Films by PECVD of Trimethylsilane Hwang, B.K., Loboda, M.J., Cerny, G., Schneider, R., Seifferly, J. Electrochemical Society	11 国際会議録 Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN Garter, M., Birkhahn, R., Steckl, A. J., Scofield, J. MRS - Materials Research Society
6 国際会議録 CHARACTERIZATION OF PHOTOLUMINESCENCE FROM ANODICALLY ETCHED SiC/Si HETEROSTRUCTURES Steckl, A.J., Su, J.N., Xu, J., Li, J.P., Yuan, C., Yih, P.H., Mogul, H.C. Materials Research Society	12 国際会議録 Boule Shape Dependence of Shear and von-Mises Stress Distributions in Bulk SiC during Sublimation Growth Roman V. Drachev, Darren M. Hansen, M.J. Loboda Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12