Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers

Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

173

終了ページ:

176

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Multi-wafer VPE growth of highly uniform SiC epitaxial layers O'Loughlin, M. J., Nordby, H. D. Jr., Burk, A. A. Jr. MRS-Materials Research Society	7 国際会議録 SiC Warm-Wall Planetary VP E Growth on Multiple 100-mm Diameter Wafers Burk, A.A., O'Loughlin, M.J., Paisley, M.J., Powell, A.R., Brady, M.F, Leonard, R.T., McClure, D.A. Trans Tech Publications
2 国際会議録 SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor ,A.A.Burk,Jr., O'Loughlin,M.J., Mani,S.S. Trans Tech Publications	8 国際会議録 Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices M. O'Loughlin, A. Burk Jr., D. Tsvetkov, S. Ustin, J.W. Palmour Trans Tech Publications
3 国際会議録 Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor Burk, A. A., O'Loughlin, M. J., Paisley, M. J., Powell, A. R., Brady, M. F., Leonard, R. T., Muller, S. G., Allen, S. T. Trans Tech Publications	9 国際会議録 Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
4 国際会議録 SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, D. Barnhardt, M.J. O'Loughlin, L. Garrett Trans Tech Publications	10 国際会議録 High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs L. Cheng, S.H. Ryu, A.K. Agarwal, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
5 国際会議録 Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, M.J. O'Loughlin, S. Ustin, L. Garrett Trans Tech Publications	11 国際会議録 Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals Lin Cheng, Michael J. O'Loughlin, Alexander V. Suvorov, Edward R. Van Brunt, Albert A. Burk Materials Research Society
6 国際会議録 SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices A.A. Burk, M.J. O'Loughlin, J.J. Sumakeris, C. Hallin, E. Berkman Trans Tech Publications	12 国際会議録 Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices M. J. O'Loughlin, K. G. Irvine, J. J. Sumakeris, M. H. Armentrout, B. A. Hull, C. Hallin, A. A. Burk Jr. Materials Research Society

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