Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

著者名:

Kushibe, M.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

169

終了ページ:

172

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor Masahara, K., Takahashi, T., Kushibe, M., Ohno, T., Nishio, J., Kojima, K., Ishida, Y., Suzuki, T., Tanaka, T., Yoshida, … Trans Tech Publications	7 国際会議録 Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition Nishio, J., Kushibe, M., Masahara, K., Kojima, K., Ohno, T., Ishida, Y., Takahashi, T., Suzuki, T., Tanaka, T., Yoshida, … Trans Tech Publications
2 国際会議録 High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor Masahara, K., Takahashi, T., Kushibe, M., Ohno, T., Nishio, J., Kojima, K., Ishida, Y., Suzuki, T., Tanaka, T., Yoshida, … Trans Tech Publications	8 国際会議録 Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates Masahara, K., Kushibe, M., Ohno, H., Kojima, K., Takahashi, T., Ishida, Y., Suzuki, T., Tanaka, T., Yoshida, S., Arai, … Trans Tech Publications
3 国際会議録 Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure Masahara, K., Ishida, Y., Okumura, H., Takahashi, T., Kushibe, M., Ohno, T., Suzuki, T., Tanaka, T., Yoshida, S., Arai, … Trans Tech Publications	9 国際会議録 Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications
4 国際会議録 Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor Hasegawa, M., Miyauchi, A., Masahara, K., Ishida, Y., Takahashi, T., Ohno, T., Nishio, J., Suzuki, T., Tanaka, T., … Trans Tech Publications	10 国際会議録 Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications
5 国際会議録 Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor Hasegawa, M., Miyauchi, A., Masahara, K., Ishida, Y., Takahashi, T., Ohno, T., Nishio, J., Suzuki, T., Tanaka, T., … Trans Tech Publications	11 国際会議録 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics Ishida, Y., Kushibe, M., Takahashi, T., Okumura, H., Yoshida, S. Trans Tech Publications
6 国際会議録 Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition Nishio, J., Kushibe, M., Masahara, K., Kojima, K., Ohno, T., Ishida, Y., Takahashi, T., Suzuki, T., Tanaka, T., Yoshida, … Trans Tech Publications	12 国際会議録 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics Ishida, Y., Kushibe, M., Takahashi, T., Okumura, H., Yoshida, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12