Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments

Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments

著者名:

Ellison, A.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

131

終了ページ:

136

総ページ数:

6

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 SiC Crystal Growth by HTCVD Ellison, A., Magnusson, B., Sundqvist, B., Pozina, G., Bergman, J.P., Janzen, E., Vehanen, A. Trans Tech Publications	7 国際会議録 Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films Wahab, Q., Ellison, A., Zhang, J., Forsberg, U., Duranova, E., Henry, A., Madsen, L. D., Janzen, E. Trans Tech Publications
2 国際会議録 HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density Ellison, A., Magnusson, B., Hemmingsson, C., Magnusson, W., Iakimov, T., Storasta, L., Anne, H., Henelius, N., Janzen, … Materials Research Society	8 国際会議録 SiC and III-Nitride Growth in Hot-Wall CVD Reactor Janzen, E., Bergman, J. P., Danielsson, O., Forsberg, U., Hallin, C., Hassan, J. ul, Henry, A., Ivanov, I. G., … Trans Tech Publications
3 国際会議録 Growth of High Quality p-Type 4H-SiC Substrates by HTCVD Sundqvist, B., Ellison, A., Jonsson, A., Henry, A., Hallin, C., Bergman, J.P., Magnusson, B., Janzen, E. Trans Tech Publications	9 国際会議録 CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane Hallin,C., Ellison,A., Ivanov,I.G., Henry,A., Son,N.T., Janzen,E. Trans Tech Publications
4 国際会議録 Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD Ellison,A., Kimoto,T., Ivanov,I.G., Wahab,Q., Henry,A., Kordina,O., Zhang,J., Hemmingsson,C.G., Gu,C.-Yu., Leys,M.R., … Trans Tech Publications	10 国際会議録 Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation Zhang, J., Forsberg, U., Isacson, M., Ellison, A., Henry, A., Kordina, O., Janzen, E. Trans Tech Publications
5 国際会議録 Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations Zhang, J., Ellison, A., Danielsson, Oe., Henry, A., Janzen, E. Trans Tech Publications	11 国際会議録 Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation Zhang, J., Forsberg, U., Isacson, M., Ellison, A., Henry, A., Kordina, O., Janzen, E. Trans Tech Publications
6 国際会議録 HTCVD Grown Semi-Insulating SiC Substrates Ellison, A., Magnusson, B., Son, N.T., Storasta, L., Janzen, E. Trans Tech Publications	12 国際会議録 Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes Wahab, Q., Ellison, A., Hallin, C., Henry, A., Persio, J. Di, Martinez, R., Janzen, E. Trans Tech Publications

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