The Effects Of Post-Oxidation Anneal Conditions On Interface State Density Near The Conduction Band Edge And Inversion Channel Mobility For SiC MOSFETs | 東京工業大学附属図書館文献データベース

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The Effects Of Post-Oxidation Anneal Conditions On Interface State Density Near The Conduction Band Edge And Inversion Channel Mobility For SiC MOSFETs

著者名:

Williams, John Robert

Pantelides, S.T.

Feldman, Len C.

Weller, Robert A.

さらに 3 件

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T8.7

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

類似資料:

1 国際会議録 Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Materials Research Society	7 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications
2 国際会議録 Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Lu, C.-Y., Cooper, J.A., Jr., Chung, G.Y., Williams, J.R., McDonald, K., Feldman, L.C. Trans Tech Publications	8 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications
3 国際会議録 Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Lu, C.-Y., Cooper, J.A., Jr., Chung, G.Y., Williams, J.R., McDonald, K., Feldman, L.C. Trans Tech Publications	9 国際会議録 High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kojima, K., Suzuki, T. Trans Tech Publications
4 国際会議録 Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs Suzuki, S., Harada, S., Kosugi, R., Senzaki, J., Fukuda, K. Trans Tech Publications	10 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications
5 国際会議録 Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs Suzuki, S., Harada, S., Kosugi, R., Senzaki, J., Fukuda, K. Trans Tech Publications	11 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications
6 国際会議録 Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC McDonald, K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Chung, G.Y, Tin, C.C., Williams, J.R. Electrochemical Society	12 国際会議録 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier Trans Tech Publications

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