Achievements And Characterizations Of GaN With Ga-Polarity In Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

Achievements And Characterizations Of GaN With Ga-Polarity In Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

著者名:

Shen, Xu-Qiang

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T6.22

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

類似資料:

1 国際会議録 RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy Shen, X.Q., Ide, T., Shimizu, M., Okumura, H. Trans Tech Publications	7 国際会議録 Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect Transistor Ide, T., Shimizu, M., Suzuki, A., Shen, X.-Q., Okumura, H., Nemoto, T. Trans Tech Publications
2 国際会議録 RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy Shen, X.Q., Ide, T., Shimizu, M., Okumura, H. Trans Tech Publications	8 国際会議録 Growth of GaN on Porous SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy Inoki, C.K., Kuan, T.S., Lee, C.D., Sagar, Ashutosh, Feenstra, R.M. Materials Research Society
3 国際会議録 Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure Ide, T., Shimizu, M., Shen, X. -Q., Hara, S., Okumura, H., Nemoto, T. Trans Tech Publications	9 国際会議録 A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy Ptak, A. J., Myers, T. H., Wang, Lijun, Giles, N. C., Moldovan, M., Cunha, C.R. Da, Hornak, L. A., Tian, C., Hockett, R. … Materials Research Society
4 国際会議録 Observation of Cubic GaN/AIN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy Okumura, H., Koizumi, T., Ishida, Y., Cho, S. -H., Shen, X. -Q., Yoshida, S. Trans Tech Publications	10 国際会議録 Ab initio molecular orbital characterization of some sources for laser-assisted radical beam epitaxy of group-III nitrides Kanayama, T., Shimizu, T., Kojima, H., Omote, N., Sunouchi, S., Hayashi, K. SPIE-The International Society for Optical Engineering
5 国際会議録 Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy Shim, K. H., Hong, S. E., Kim, K. H., Paek, M. C., Cho, K. I. MRS-Materials Research Society	11 国際会議録 Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates E.D. Readinger, G. Chern, M. Reed, P. Shen, M. Wraback Electrochemical Society
6 国際会議録 Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect Transistor Ide, T., Shimizu, M., Suzuki, A., Shen, X.-Q., Okumura, H., Nemoto, T. Trans Tech Publications	12 国際会議録 Silicon Molecular Beam Epitaxy Sakamoto T., Sakamoto K., Miki K., Okumura H., Yoshida S., Tokumoto H. Plenum Press

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