The Formation And Characterization Of Epitaxial Titanium Carbide Contacts To 4H-SiC

The Formation And Characterization Of Epitaxial Titanium Carbide Contacts To 4H-SiC

著者名:

Lee, Sang-Kwon

Danielsson, Erik

Zetterling, Carl-Mikael

Ostling, Mikael

Palmquist, Jens-Petter

Hogberg, Hans

Jansson, Ulf

さらに 2 件

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T6.9

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

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1 国際会議録 High-Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC Zetterling, C-M., Ostling, M., Norin, L., Jansson, U. MRS - Materials Research Society	7 国際会議録 Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Lee, H.S., Domeij, M., Zetterling, C.M., Ostling, M., Lu, J. Trans Tech Publications
2 国際会議録 A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer Danielsson, E., Domeij, M., Lee, H. S., Zetterling, C. M., Ostling, M., Schoner, A., Hallin, C. Trans Tech Publications	8 国際会議録 Challenges for High Temperature Silicon Carbide Electronics Zetterling, C. -M., Koo, S. -M., Danielsson, E., Liu, W., Lee, S. -K., Domeij, M., Lee, H. -S., Ostling, M. Materials Research Society
3 国際会議録 Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures Lee, H. S., Domeij, M., Danielsson, E., Zetterling, C. M., Ostling, M. Trans Tech Publications	9 国際会議録 Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors Danielsson, E., Zetterling, C.-M., Ostling, M., Forsberg, U., Janzen, E. Trans Tech Publications
4 国際会議録 Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States Domeij, M., Danielsson, E., Lee, H. S., Zetterling, C. M., Ostling, M. Trans Tech Publications	10 国際会議録 Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C K. Smedfors, L. Lanni, M. Östling, C.M. Zetterling Trans Tech Publications
5 国際会議録 Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide Lee, S.-K., Zetterling, C.-M., Ostling, M., Fusegawa, I., Magnusson, M.H., Deppert, K., Wernersson, L.-E., Samuelson, … Trans Tech Publications	11 国際会議録 SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance Mikael Östling, Martin Domeij, Carina Zaring, Andreij Konstantinov, Reza Ghandi, Benedetto Buono, Anders Hallen, Carl … Materials Research Society
6 国際会議録 Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions With Ni Salicide Contacts Isheden, Christian, Hellstrom, Per-Erik, Radamson, Henry H., Ostling, Mikael Materials Research Society	12 国際会議録 Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide R. Ghandi, H.S. Lee, M. Domeij, C.M. Zetterling, M. Östling Trans Tech Publications

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