Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide | 東京工業大学附属図書館文献データベース

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Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide

著者名:

さらに 3 件

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T6.7

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

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1 国際会議録 Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H., Arai, K. Trans Tech Publications	7 国際会議録 Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing Tanaka, Y., Tanoue, H., Arai, K. Trans Tech Publications
2 国際会議録 Hot-Implantation of Phosphorus Ions into 4H-SiC Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N., Okushi, H. Trans Tech Publications	8 国際会議録 Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching Henkel, T., Ferro, G., Nishizawa, S., Pressler, H., Tanaka, Y., Tanoue, H., Kobayashi, N. Trans Tech Publications
3 国際会議録 Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing Tanaka, Y., Tanoue, H., Arai, K. Trans Tech Publications	9 国際会議録 Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC Senzaki, J., Fukuda, K., Arai, K. Trans Tech Publications
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5 国際会議録 Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration J. Senzaki, A. Shimozato, K. Fukuda, K. Arai Trans Tech Publications	11 国際会議録 Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications
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