Lateral And Vertical Growth Study In The Initial Stages Of GaN Growth On Sapphire With ZnO Buffer Layers By Hydride Vapor Phase Epitaxy

Lateral And Vertical Growth Study In The Initial Stages Of GaN Growth On Sapphire With ZnO Buffer Layers By Hydride Vapor Phase Epitaxy

著者名:

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T4.9

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

類似資料:

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2 国際会議録 Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy Kuan, T. S., Inoki, C. K., Hsu, Y., Harris, D. L., Zhang, R., Gu, S., Kuech, T. F. MRS-Materials Research Society	8 国際会議録 Growth of Thick GaN Films by Halide Vapor Phase Epitaxy Perkins, N.R., Horton, M.N., Matyi, R.J., Bandie, Z.Z., McGill, T.C., Kuech, T.F. Electrochemical Society
3 国際会議録 The Chemistry of GaN Growth Kuech, T.F., Gu, Shulin, Wate, Ramchandra, Zhang, Ling, Sun, Jingxi, Dumesic, J. A., Redwing, J. M. Materials Research Society	9 国際会議録 Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy Kim. S., Li, X., Coleman, J. J., Zhang, R., Hansen, D. M., Kuech, T. F., Bishop, S. G. MRS - Materials Research Society
4 国際会議録 Incorporation of Er Into GaN by In Situ Doping During Halide Vapor-Phase Epitaxy Zhang, Rong, Kuech, T. F. MRS - Materials Research Society	10 国際会議録 GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy Napierala, J., Martin, D., Buehlmann, H.J., Gradecak, S., Ilegems, M. Trans Tech Publications
5 国際会議録 Epitaxial Lateral Overgrowth of GaN With Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy Zhang, R., Zhang, L., Hansen, D. M., Boleslawski, M. P., Chen, K. L., Lu, D. Q., Shen, B., Zheng, Y. D., Kuech, T. F. MRS - Materials Research Society	11 国際会議録 Epitaxial lateral overgrowth of GaN by HVPE and MOVPE Zhang, R., Gu, S.L., Lu, D.Q., Shen, B., Shi, Y., Zhang, L., Kuech, T.F., Boleslawski, M.P., Kuan, T.S., Zheng, Y. SPIE-The International Society for Optical Engineering
6 国際会議録 The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown Using Hydride Vapor Phase Epitaxy Dwikusuma, F., Kuech, T. F. Materials Research Society	12 国際会議録 Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor-Phase Epitaxy Tsuchiya, H., Sunaba, K., Yonemura, S., Suemasu, T., Hasegawa, F. MRS - Materials Research Society

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