Low Temperature Lateral Epitaxial Growth Of Silicon Carbide On Silicon

Low Temperature Lateral Epitaxial Growth Of Silicon Carbide On Silicon

著者名:

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T4.1

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

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2 国際会議録 Epitaxial Growth of SiC on AIN/Spphire Using Hexamethyldisilane by MOVPE Teker, Kasif, Lee, Ki Hoon, Jacob, Chacko, Nishino, Shigehiro, Pirouz, Pirouz Materials Research Society	8 国際会議録 Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications
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