Polarization Induced 2DEG In MBE-Grown AlGaN/GaN HFETs: On The Origin, DC And RF Characterization
- 著者名:
Ventury, Ramakrishna Smorchkova, I.P. Elsass, Christopher R. Heying, Benjamin Keller, Stacia Mishra, Umesh K. - 掲載資料名:
- Wide-bandgap electronic devices
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 622
- 発行年:
- 2001
- 開始ページ:
- T2.5
- 出版情報:
- Warrendale, PA.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995307 [1558995307]
- 言語:
- 英語
- 請求記号:
- M23500/622
- 資料種別:
- 国際会議録
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