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Implanted Bipolar Technology In 4H-SiC

著者名:
Wright, Nick G.
Johnson, C.M.
O'Neil, Anthony G.
Horsfall, Alton
Ortolland, Sylvie
Adachi, Kazuhiro
Knights, Andrew P.
Coleman, Paul G.
さらに 3 件
掲載資料名:
Wide-bandgap electronic devices
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
622
発行年:
2001
開始ページ:
T1.7
出版情報:
Warrendale, PA.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995307 [1558995307]
言語:
英語
請求記号:
M23500/622
資料種別:
国際会議録

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1 国際会議録 Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology

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