In Situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100) Si by Reactive Chemical Vapor Deposition

In Situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100) Si by Reactive Chemical Vapor Deposition

著者名:

掲載資料名:

Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

611

発行年:

2001

開始ページ:

C10.3

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558995192 [1558995196]

言語:

英語

請求記号:

M23500/611

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014199
シリーズID:	PA00000011
会議名:	Symposium on gate stack and silicide issues in silicon processing
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.25-2000.04.27

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