Remote Plasma Nitridation of In Situ Steam Generated (ISSG) Oxide | 東京工業大学附属図書館文献データベース

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Remote Plasma Nitridation of In Situ Steam Generated (ISSG) Oxide

著者名:

Al-Shareef, Husam N.

さらに 6 件

掲載資料名:

Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

611

発行年:

2001

開始ページ:

C7.15

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558995192 [1558995196]

言語:

英語

請求記号:

M23500/611

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014199
シリーズID:	PA00000011
会議名:	Symposium on gate stack and silicide issues in silicon processing
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.25-2000.04.27

類似資料:

1 国際会議録 Gate Dielectrics Formed by Remote Plasma Nitridaion of Ultrathin In-Situ Steam Generated (ISSG) Oxides Watt, V.H.C., Torres, K., Jackson, M.D., Huff, H.R., Abmed, K., Jallepally, R., Noble, D., Toni, N., Miner, G. Electrochemical Society	7 国際会議録 High Performance, Highly Reliable Gate Oxide Formed with Rapid Thermal Oxidation In-Situ Steam Generation (ISSG) Technique Ma, Y., Chen, Y.N., Brown, M.M, Li, F., Chen, Y., Eng, J., Jr., Opila, R.L., Chabal, Y.J., Sapjeta, J., Muller, D.A., … Electrochemical Society
2 国際会議録 Correlation between the reliability of ultrathin ISSG SiO2 and hydrogen content Luo,T.Y., Al-Shareef,H.N., Brown,G.A., Laughery,M., Watt,V.H.C., Karamcheti,A., Jackson,M.D., Huff,H.R. SPIE-The International Society for Optical Engineering	8 国際会議録 Electrical and physical characterization of ultrathin silicon oxynitride gate dielectric films formed by the jet vapor deposition technique Karamcheti, A., Watt, V. H. C., Luo, T. Y., Brady, D., Shaapur, F., Vishnubhotla, L., Gale, G., Huff, H. R., Jackson, M. … MRS-Materials Research Society
3 国際会議録 Ultrathin CVD Gate Dielectrics for 130 nm Technology Node Watt, V.H.C., Karamcheti, A., Luo, T.-Y, Al-Shareef, H.N., Jackson, M.D., Huff, H.R. Electrochemical Society	9 国際会議録 Influence of the Standard CMOS Procesing on Ta2O5 Gate Dielectric Transistors Performance Bersuker, G., Gilmer, M., Zeitzoff, P.M., Brown, G.A., Jackson, M.D., Shaapur, F., Foran, B., Huff, H.R. Electrochemical Society
4 国際会議録 Prospective technology for system-on-a-chip: N2 implant followed by VHP O2 reoxidation Luo,T.Y., Al-Shareef,H.N., Brown,G.A., Watt,V.H.C., Karamcheti,A., Jackson,M.D., Huff,H.R., Evans,B., Lee,C.H., … SPIE-The International Society for Optical Engineering	10 国際会議録 The Gate Stack/Shallow Junction Challenge for Sub-100 nm Technology Generations * Huff, H.R., Brown, G.A., Larson, L.A. Electrochemical Society
5 国際会議録 Investigation of In-Situ Steam Generated Oxide (ISSG) followed by Remote Plasma Nitridation (RPN) for Effective Oxide Thickness Decrease and Gate Leakage … Eason, K., Jallepally, R., Noble, D., Hattangady, S., Khamankar, R., Rotondaro, A.L.P. Electrochemical Society	11 国際会議録 Metrology Study Of Sub 20 Aa Oxynitride By Corona-Oxide-Silicon (COS) And Conventional C-V Approaches Hung, Pui Yee, Brown, George A., Zhang, Michelle, Bennett, Joe, AL-Shareef, Husam N., Young, Chadwin, Oroshiba, Chris, … Materials Research Society
6 国際会議録 Development of Silicon Nitride Films for Gate Dielectric Applications Brady, D., Watt, V.H.C., Karamcheti, A., Vishnubhotla, L., Bersuker, G., Kim, S., Zietzoff, P., Gilmer, M., Guan, J., … Electrochemical Society	12 国際会議録 * Sub-100 nm Gate Stack/Ultra Shallow Junction Integration Challenges Huff, H.R., Brown, G.A., Larson, L.A., Murto, R.W. Electrochemical Society

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