Monte Carlo Analysis Of The Evolution From Point To Extended Interstitial Type Defects in Crystalline Silicon

Monte Carlo Analysis Of The Evolution From Point To Extended Interstitial Type Defects in Crystalline Silicon

著者名:

掲載資料名:

Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

610

発行年:

2001

開始ページ:

B11.5

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558995185 [1558995188]

言語:

英語

請求記号:

M23500/610

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014198
シリーズID:	PA00000011
会議名:	Symposium on Si front-end processing
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

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