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Quantitative Depth Profiles Of Vacancy Cluster Defects Produced By MeV Ion Implantation In Si: Species And Dose Dependence

著者名:
Chen, Claudine M.
Rassiga, Stefano
Weber, Marc H.
Petkov, Mihail P.
Lynn, Kelvin G.
Atwater, Harry A.
さらに 1 件
掲載資料名:
Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
610
発行年:
2001
開始ページ:
B9.4
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995185 [1558995188]
言語:
英語
請求記号:
M23500/610
資料種別:
国際会議録

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