Low Temperature Poly-Si Layers Deposited By Hot Wire CVD Yielding A Mobility Of 4.0 cmW1 In Top Gate Thin Film Transistors

Low Temperature Poly-Si Layers Deposited By Hot Wire CVD Yielding A Mobility Of 4.0 cmW1 In Top Gate Thin Film Transistors

著者名:

Chen, Y.

掲載資料名:

Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

609

発行年:

2001

開始ページ:

A31.3

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558995178 [155899517X]

言語:

英語

請求記号:

M23500/609

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014197
シリーズID:	PA00000011
会議名:	Symposium on amorphous and heterogeneous silicon thin films
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.28

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