Memory Effects In MOS Capacitors With Silicon Rich Oxide Insulators
- 著者名:
Bongiorno, C. Crupi, I. Fazio, B. Gerardi, C. Liao, Y. Lombardo, S. Privitera, S. Spinella, C. Vulpio, M. - 掲載資料名:
- Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 609
- 発行年:
- 2001
- 開始ページ:
- A29.1
- 出版情報:
- Warrendale: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995178 [155899517X]
- 言語:
- 英語
- 請求記号:
- M23500/609
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
8
国際会議録
Effects of Arsenic Concentration Profile on Electric Properties of Gate Oxide in MOS Devices
Electrochemical Society |
3
国際会議録
Effects Of Nitridation By N2O Or NO On The Electrical Properties Of Thin Gate Or Tunnel Oxides
Materials Research Society |
9
国際会議録
THE EFFECT OF CHANNEL?PROTECT OXIDE ON LASER RECRYSTALLIZED SILICON?ON-INSULATOR MOS DEVICES
Materials Research Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
11
国際会議録
Spatial Separation Mechanism in Si Quantum Dots Deposited by Chemical Vapor Deposition on SiO2
Materials Research Society |
6
国際会議録
Ion Assisted Crystal Grain Nucleation in a-Si: A Low Temperature Route Towards Poly-Si Formation
Electrochemical Society |
Electrochemical Society |