FTIR Spectroscopy And Spectroscopic Ellipsometry Study Of Nanocrystalline Layers Formed By High-Dose Hydrogen And Deuterium Implantation Of Silicon | 東京工業大学附属図書館文献データベース

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FTIR Spectroscopy And Spectroscopic Ellipsometry Study Of Nanocrystalline Layers Formed By High-Dose Hydrogen And Deuterium Implantation Of Silicon

著者名:

Antonova, I. V.

Gutakovskii, A. K.

Obodnikov, V. I.

Safronov, L. N.

Stepovik, A. P.

VSpesivtsev, E.

さらに 3 件

掲載資料名:

Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

609

発行年:

2001

開始ページ:

A24.9

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558995178 [155899517X]

言語:

英語

請求記号:

M23500/609

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014197
シリーズID:	PA00000011
会議名:	Symposium on amorphous and heterogeneous silicon thin films
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.28

類似資料:

1 国際会議録 Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures Antonova,J.V., Popov,V.P., Bak-Misiuk,J., Domagala,J., Misiuk,A., Obodnikov,V.I., Gutakovskii,A.K., Romano-Rodriguez,A. SPIE-The International Society for Optical Engineering	7 国際会議録 ANALYSIS OF HIGH-DOSE IMPLANTED SILICON BY HIGH-DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM Lohner, T., Mezey, G., Fried, M., Ghita, L., Ghita, C., Mertens, A., Kerkow, H., Kotai, E., Paszti, F., Banyai, F., … Materials Research Society
2 国際会議録 Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals Popov, V. P., Gutakovsky, A. K., Antonova, I. V., Khuravlev, K. S., Spesivtsev, E. V., Morosov, I. I., Pokhil, G. P. MRS - Materials Research Society	8 国際会議録 Spectroscopic Ellipsometry Studies of Nanocrystalline Silicon in Thin-Film Silicon Dioxide Jellison, Gerald E., Jr., Withrow, Stephen P., Jaiswal, Supriya, Rouleau, Christopher M., Simpson, John T., White, Clark … Materials Research Society
3 国際会議録 Defects and their electronic properties in high-pressure-annealed SOI structures sliced by hydrogen Popov, V.P., Gutakovskii, A.K., Safronov, L.N., Tyschenko, I.E., Zhuravlev, S.K., Talochkin, A.B., Antonova, A.I., … Kluwer Academic Publishers	9 国際会議録 Atomically Flat Surface of Hydrogen Transferred Si Film with Boron Delta Doped Layer Popov, V.P., Safronov, L.V., Nikiforov, A.I., Sholz, R. Electrochemical Society
4 国際会議録 Non-Crucial Role of the Defects in the splitting for Hydrogen Implanted Silicon With High Boron Concentration Popov, V. P., Stas, V. F., Antonova, I. V. MRS - Materials Research Society	10 国際会議録 CHARACTERIZATION AND EVOLUTION OF MICROSTRUCTURES FORMED BY HIGH DOSE OXYGEN IMPLANTATION OF SILICON El-Ghor, M.K., Pennycook, S.J., Sjoreen, T.P., Narayan, J. Materials Research Society
5 国際会議録 THE STUDY OF DAMAGE PROFILE OF THE ION-IMPLANTED LAYER ON SILICON BY SPECTROSCOPIC ELLIPSOMETRY Luo, J., McMarr, P. J, Vedam,K. North-Holland	11 国際会議録 Effect of Annealing at Argon Pressures up to 1.2 Gpa on Hydrogen-Plasma Etched and Hydrogen Implanted Single-Crystalline Silicon Misiuk, A., Misiuk, J.B.K., Barcz, A., Romano-Rodriguez, A., Antonova, I.V., Popov, V.P., Londos, C.A., Jun, J. Kluwer Academic Publishers
6 国際会議録 Low dimension properties of nanostructures on ultra thin layers of silicon formed by oxidation of ion cut SOI wafers and electron lithography Popov, V.P., Aseev, A.L., Antonova, I.V., Nastaushev, Yu.V., Gavrilova, T.A., Naumova, O.V., Franzusov, A.A., Feafanov, … Kluwer Academic Publishers	12 国際会議録 HIGH DOSE CARBON ION IMPLANTATION STUDIES IN SILICON Srikanth, K., Chu, M., Ashok, S., Nguyen, N., Vedam, K. Materials Research Society

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