Blank Cover Image

Transport Calculations In Molecular Devices From First Principles

著者名:
掲載資料名:
Molecular electronics : symposium held November 29 - December 2, 1999, Boston, Massachusetts, U.S.A./ editors, Sokrates T. Pantelides ... [et al.]
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
582
発行年:
2001
開始ページ:
H3.3
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994904 [1558994904]
言語:
英語
請求記号:
M23500/582
資料種別:
国際会議録

類似資料:

1 国際会議録 Electronic Transport in Molecular Devices from First Principles

Di Ventra, M., Lang, N.D., Pantelides, S.T.

American Chemical Society
7 国際会議録 Calculations Of Elastic Modeuli From First Principles

Papaconstantopoulos A. D., Singh J. D.

Plenum Press
2 国際会議録 First-principles Calculation of Electron Mobilities in Ultrathin SOI MOSFETs

Evans, Matthew H., Zhang, Xiaoguang, Joannopoulos, John D., Pantelides, Sokrates T.

Materials Research Society
8 国際会議録 *FIRST PRINCIPLES CALCULATION OF RESIDUAL RESISTIVITY

Nicholson, D.M., Brown, R.H., Butler, W.H., Yang, H., Swihart, J.W., Allen, P.B., Mehta, A., Schwartz, L.M.

Materials Research Society
3 国際会議録 Properties of Novel Thermoelectrics From First Principles Calculations

Singh, D. J., Mazin, I. I., Feldman, J. L., Fornari, M.

MRS - Materials Research Society
9 国際会議録 First-Principles Calculations of the Elastic Properties of the Nickel-Based L12 Intermetallics

Iotova, D., Kioussis, N., Lim, S. P., Sun, S., Wu, R.

MRS - Materials Research Society
4 国際会議録 The Calculation of Ro-vibrational Molecular Spectra from First Principles

Hendreson. R. J, Tennyson. J, Miller. S

Kluwer Academic Publishers
10 国際会議録 RESULTS FROM FIRST PRINCIPLES MOLECULAR DYNAMICS SIMULATIONS ON a-Si

Fedders, P.A., Drabold, D.D.

Materials Research Society
5 国際会議録 First-Principles Simulations and Z-Contrast Imaging of Impurities at <001> Tilt Grain Boundaries in MgO

Yan, Y., Chisholm, M. F., Duscher, G., Pennycook, S. J., Maiti, A., Pantelides, S. T.

MRS - Materials Research Society
11 国際会議録 The Effects Of Post-Oxidation Anneal Conditions On Interface State Density Near The Conduction Band Edge And Inversion Channel Mobility For SiC MOSFETs

Chung, Gilyong, Tin, Chin-Che, Williams, John Robert, McDonald, Kyle, DiVentra, M., Pantelides, S.T., Feldman, Len C., …

Materials Research Society
6 国際会議録 First-Principles Calculations of C2H4 Adsorption on Pd Surface Stacked on Fcc-Au

N. Taguchi, S. Tanaka, T. Akita, M. Kohyama, F. Hori

Trans Tech Publications
12 国際会議録 Analysis of Wurtzite GaN/AlGaN Quantum Well Lasers from First-Principles Calculations

Uenoyama, T., Suzuki, M.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12