Structural and Light-Emitting Properties of Wurtzite InN Films Grown on Si(III) by Molecular-Beam Epitaxy

Structural and Light-Emitting Properties of Wurtzite InN Films Grown on Si(III) by Molecular-Beam Epitaxy

著者名:

掲載資料名:

Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-02

発行年:

2004

開始ページ:

259

終了ページ:

267

総ページ数:

9

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774079 [1566774071]

言語:

英語

請求記号:

E23400/961823

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014176
シリーズID:	PA00000028
会議名:	State-Of-The-Art Program on Compound Semiconductors - SOTAPOCS ; Narrow Bandgap Optoelectronic Materials and Devices Symposium ; Meeting of the Electrochemical Society
回次:	40th ; 2nd ; 205th
会議開催地:	San Antonio, TX, USA
会議開催年:	2004.05.09-2004.05.14

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